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Electrolyte thin films are used in optics, semiconductors, and other industries, and Filmetrics' instruments can measure thin films. Common dielectrics include:
Silicon dioxide - one of the simple materials, mainly due to its non absorption in most spectra (k=0) and very close to stoichiometry (that is, silicon: oxygen is very close to 1:2). Silicon dioxide grown under heat is commonly used as a thickness and refractive index standard for spectral response. Filmetrics can measure silicon dioxide thickness ranging from 3nm to 1mm.
Silicon nitride - Measurement of this film is more difficult than many dielectrics because the silicon to nitrogen ratio is usually not 3:4, and the refractive index generally needs to be measured simultaneously with the film thickness. Even more troublesome is that oxygen often infiltrates the film, generating a certain degree of silicon nitride oxide, which increases the difficulty of measurement. Fortunately, our system can measure the complete characteristics of silicon nitride thin films with just one click in a few seconds!
Measurement Example
Silicon nitride thin films are widely used in the semiconductor industry as dielectrics, passivation layers, or mask materials. In this case, we successfully measured the thickness, refractive index, and extinction coefficient of a silicon nitride film on a silicon substrate using F20-UVX. Interestingly, the optical properties of silicon nitride thin films are closely related to their molecular equivalent. Using Filmetrics' silicon nitride diffusion model, F20-UVX can easily measure the thickness and optical properties of silicon nitride thin films, whether they are silicon rich, silicon poor, or molecular equivalent.
Measurement setting:
F20-UVX with RP-1-UV optical fiber
Using the program:
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