Solution for Measuring Film Thickness in SiC Semiconductors

2026-06-27 16:45:51 admin


In SiC semiconductors

Film thickness measurement solution


Younikon Technology Co., Ltd




catalogue

01

Overview of SiC Semiconductor Materials

02

Advantages of SiC materials

03

Types of SiC devices

04

SiC Semiconductor Applications

05

SiC semiconductor manufacturer

06

Measurement requirements for SiC semiconductors

01

Overview of SiC Semiconductor Materials

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With the maturity of the development of first and second generation semiconductor materials, Si power devices currently in large-scale use have reached their performance bottleneck. The improvement of Si power devices' performance in terms of operating frequency, power, heat resistance, energy efficiency, resistance to harsh environments, and miniaturization is facing insurmountable bottlenecks.

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More and more fields of modern technology require third-generation semiconductors with high frequency, high power, high temperature resistance, and good chemical stability. As an excellent representative of third-generation semiconductors, SiC (Silcon carbide) is receiving increasing attention from people.

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As a new type of semiconductor material, SiC has become an important semiconductor material for manufacturing short wavelength optoelectronic devices, high-temperature devices, radiation resistant devices, and high-power/high cost electronic devices due to its excellent physical, chemical, and electrical properties. Especially when applied under harsh conditions, the characteristics of SiC devices far exceed those of Si and GaAs devices. Therefore, SiC devices and various sensors have gradually become one of the key components, playing an increasingly important role.

Since the 1980s, especially since the first SiC substrate wafer entered the market in 1989, SiC devices and circuits have experienced rapid development. In certain fields, such as light-emitting diodes, high-frequency high-power and high-voltage devices, SiC devices have been widely used in commercial applications.



02

Advantages of SiC materials

Sic silicon carbide materials generally have the following advantages:

1.

High impact field strength

2.

high thermal conductivity

3.

Strong high-temperature antioxidant capacity

4.

Good wear resistance

5.

Stable chemical properties

6.

High saturation and electron drift rate

Comparison of Relevant Parameters between SiC, Si, and GaAs

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03

Types of SiC devices

Silicon carbide devices mainly include power diodes and power switching transistors.

Power diode

Junction Barrier Schottky (JBS) diode

PiN diode and super junction diode

Power switch tube

Metal oxide semiconductor field-effect switch (MOSFET)

Junction Field Effect Transistor (JFET)

Bipolar junction transistor (BJT)

Insulated Gate Bipolar Transistor (IGBT)

Gate turn off thyristor (GTO)

Emitter switchable thyristor (ETO)

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04

SiC Semiconductor Applications

Silicon carbide semiconductor devices are particularly suitable for applications that require high efficiency or temperature due to their high-frequency, high-efficiency, and high-temperature characteristics. Widely applicable to solar inverters, vehicle power supplies, new energy vehicle motor controllers UPS、 Charging stations, power sources, and other related fields.

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05

SiC semiconductor manufacturer

Foreign manufacturers

Domestic manufacturers

Infineon Germany

Zhuzhou CRRC Times Semiconductor

Cree Corporation, USA

Qidi New Materials (Wuhu)

GE

Wuxi Huarun Shanghua Technology

Roma Corporation of Japan

...


06

Measurement requirements for SiC semiconductors

Common types of film thickness testing in SiC semiconductor process measurement:

Α-Si (1000-20000A)

SiNx (100-4000A)

SiO2 (30-10000A)

USG(1000-20000A)

C membrane (100-2000A)

BPSG (1000-20000A)

POLY (1000A-20000A)


Match product model

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F50-UV

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F54-UV

measurement parameters

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measurement data

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C on SiC

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POLY on SiC

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SiO2 on SiC

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SiNx on SiC

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USG on SiC

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BPSG on SiC


The author of this article

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Hu Shudong

east China sales manager

I have been working in the thin film measurement industry for over ten years and have rich experience in providing solutions for thin film measurement. The previously difficult problem of measuring channel morphology and depth in the microfluidic chip industry has been solved.

I will mount a long wind some day and break the heavy waves, and set my cloudy sail straight and bridge the deep, deep sea

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We have been deeply involved in the thin film measurement industry for over ten years. No matter what problems you have in thin film measurement, our technical experts can provide you with valuable advice or solutions. Welcome to call, we are pleased to discuss your application issues with you.


Consultation hotline: 400-186-8882

E-mail info@unicorn-tech.com

Younikon Technology Co., Ltd

Yiying Technology (Shanghai) Co., Ltd


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