Author: Kevin Hu, Technical Engineer at Unicon Technology Co., Ltd
With the arrival of the 5G wave, the new generation of mobile communication products mostly have characteristics such as high power and high temperature resistance. Traditional raw materials such as silicon (Si) cannot overcome losses in high temperature, high pressure, and high frequency, and are gradually being eliminated. They cannot keep up with the development of the times and cannot meet the requirements of modern technology. This has led to the emergence of new silicon carbide (SiC) technology in the semiconductor industry.
At present, the SiC product landscape is still in a tripartite state, with the United States, Europe, and Japan accounting for 80% of global output value. Although China is about to enter the 5G era, semiconductors in SiC are still in the early stages of development, with layouts in substrates, epitaxial wafers, and components.
In order to control and detect product processes and improve technical production levels, it is important to control various film thicknesses in SiC processes.
Our Filmetrics optical film thickness gauge provided by Nikon has been widely used in semiconductor related enterprises, especially in emerging SiC device measurement applications, due to its advantages of fast and non-destructive optical measurement. For example, domestic SiC production enterprises such as CRRC, CR Shanghua, Qidi New Materials, etc.
Common measurement film layers in SiC process include SiO2/PESiO2, SiNx, C film, polycrystalline silicon, amorphous silicon, photoresist, BPSG/USG, etc.
In order to better solve the measurement problems in the constantly emerging SiC new processes and to help semiconductor companies improve their production processes, we at U-Nikon are willing to work with manufacturers to make progress and contribute to the development of Chinese chips. If you have any related measurement needs, please feel free to call our technical engineers for discussion.
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