As a key material in microelectromechanical systems (MEMS), microfluidic devices, and advanced packaging processes, the thickness uniformity of thick photoresist directly affects the performance and yield of products. However, the thickness of SU-8 photoresist can usually reach tens to hundreds of micrometers. Traditional visible light thickness gauges cannot effectively penetrate due to band limitations, and the measurement results often have significant deviations, becoming a technical bottleneck that restricts process improvement. As a professional service provider in the field of precision thin film measurement, Younikon Technology has launched Filmetrics F3-sX optical thick filmthickness gaugeWith exclusive near-infrared spectroscopy reflection technology, the industry's difficult problem of measuring thick photoresist has been solved.
One reason is that thick photoresist has strong absorption characteristics for visible light in the 380-1050nm wavelength range. The light source of traditional visible light thickness gauges cannot penetrate the photoresist layer to reach the substrate, resulting in incomplete interference spectra and complete distortion of measurement results.
Secondly, the surface roughness after thick photoresist coating process usually exceeds 1 μ m. The 1.5mm large light spot standard on traditional thickness gauges will average the surface roughness signal, which cannot reflect the true differences in local thickness. The microstructure area of MEMS devices often requires micrometer level thickness accuracy control.
Thirdly, traditional measurement methods rely heavily on destructive cross-sectional scanning electron microscopy testing, which takes more than 2 hours to detect a single sample and cannot be reused, greatly increasing research and production costs.
This thickness gauge comes standard with a 10 μ m micro measurement spot, which can accurately focus on the micro areas of the sample surface, effectively avoiding the interference of high and low undulations on rough surfaces. Even in microstructure areas with a width of only 20 μ m in MEMS devices, high-precision local adhesive thickness measurement can be achieved. At the same time, the system supports measurement rates up to 1kHz, which not only meets the needs of rapid sample detection in laboratories, but can also be integrated into roll to roll (R2R) production lines to achieve real-time film thickness monitoring during continuous production processes.
F3-s980 is a cost optimized type with a wavelength range of 960-1000nm, suitable for conventional thick film measurement, and can measure a maximum thickness of up to 1.5mm
F3-s1310 is optimized for heavily doped silicon, with a wavelength range of 1280-1340nm, and can accurately measure thick photoresist and epitaxial layers on low resistivity silicon wafers
F3-s1550 is an ultra thick film type with a wavelength range of 1520-1580nm and a measurement range of up to 3mm, suitable for measuring extreme thick films and compound semiconductors
It is worth mentioning that this thickness gauge can also be equipped with a visible light band extension module (380-1050nm), which further extends the measurement lower limit from 15nm to nanoscale ultra-thin films. One device can cover the full range measurement needs from ultra-thin optical coating to 3mm thick film, making it particularly suitable for comprehensive laboratories and production lines with multiple thickness range samples.
After introducing the Nikon Filmetrics F3-sX thickness gauge, the company completely solved this production bottleneck. The technical personnel stated:; The thickness of SU-8 photoresist can range from tens to hundreds of microns, which is difficult for ordinary visible light reflectometers to measure accurately. The near-infrared band and 10 μ m spot of this thickness gauge from Nikon perfectly solve this problem.
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